Mounting Type
IGBT power tube Transistor Description
IGBT power tube Transistor Place of Origin
Congo, The Democratic Republic Of The Series
IGBT power tube Transistor Brand
IGBT power tube Transistor Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
DC Current Gain (hFE) (Min) @ Ic, Vce
Resistor - Emitter Base (R2)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Drive Voltage (Max Rds On, Min Rds On)
IGBT Type
IGBT power tube Transistor Input Capacitance (Cies) @ Vce
Voltage - Breakdown (V(BR)GSS)
Current - Drain (Idss) @ Vds (Vgs=0)
Voltage - Cutoff (VGS off) @ Id
Current - Gate to Anode Leakage (Igao)
Applications
IGBT power tube Transistor Transistor Type
IGBT power tube Transistor Product Name
G60H65DFB TO247 60A 650V IGBT power Type
IGBT power tube Transistor SHIPPING WAY
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